PART |
Description |
Maker |
FC903 FC903-TR-E |
0.1 A, 3 ELEMENT, SILICON, SIGNAL DIODE High-Speed Switching Composite Diode Silicon Epitaxial Planar Type High-Speed Switching Composite Diode
|
ON Semiconductor SANYO SEMICONDUCTOR CO LTD SANYO[Sanyo Semicon Device]
|
RM25HG-24S RM25HG-24S01 |
Fast Recovery Diode Modules, F Series (for IGBT speed switching) FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE HIGH SPEED SWITCHING USE
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
CPD63 |
Chip Form: HIGH SPEED SWITCHING DIODE Switching Diode High Speed Switching Diode Chip
|
Central Semiconductor
|
SMBD914 MMBD914 |
0.25 A, 100 V, SILICON, SIGNAL DIODE Silicon Switching Diode For high-speed switching applications Qualified according AEC Q101
|
Infineon Technologies AG
|
IMN10 |
Switching Diode Ultra high speed switching High reliability.
|
Rohm
|
RM100C1A-XXF RM100CA/C1A-XXF |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE Fast Recovery Diode Modules, F Series (for Bipolar speed switching)
|
Mitsubishi Electric Corporation
|
1SS199 1SS199MHD |
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching 硅肖特基二极管各种探测器,高速开 Silicon Schottky Barrier Diode for Various Detector High Speed Switching Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching
|
Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
|
Q62702-A1030 BAV70W |
From old datasheet system SILICON SWITCHING DIODE ARRAY (FOR HIGH SPEED SWITCHING APPLICATIONS COMMON CATHODE)
|
Siemens Semiconductor Group SIEMENS AG
|
BAV99W Q62702-A1051 |
From old datasheet system Silicon Switching Diode Array (Connected in series For high speed switching applications)
|
Siemens Semiconductor Group Infineon
|